Ion Beam Center at HZDR (IBC)
Core Data
Hosting Legal Entity
Helmholtz Association
Bautzner Landstrasse 400, Hochfeld-Magnetlabor Dresden, Dresden, PO: 01328 (Germany)
Type Of RI
Coordinating Country
Current Status:
Operational since 1995
Scientific Description
Mission and objectives
The Institute of Ion Beam Physics and Materials Research at the Helmholtz-Zentrum Dresden-Rossendorf (HZDR) focuses its activities on materials research for future applications, e. g., in information technology and for energy conversion. To this end, a large variety of ion beam technologies is used for the synthesis, modification and analysis of solid surfaces, thin films and nanostructures. The range of materials being investigated extends from semiconductors, oxides and hard coatings to magnetic films or geological samples.Within this core competence, the Ion Beam Center (IBC) offers ion implantation, ion- and plasma-based thin film deposition and ion beam analysis to external users. Ion energies ranging from some 10 eV up to about 60 MeV are available from electrostatic accelerators, ion implanters and plasma equipment at more than 25 experimental stations. Moreover, for certain energy ranges, special techniques like an analytical ion-microprobe (focus < 5 ┬Ám), several focused-ion beam facilities (focus < 10 nm), highly-charged ion devices (charge state > 10+) or facilities for plasma-based ion implantation are available. As an international center for the application of ion beams in materials research and technology, the IBC shares its extensive know-how with partners from universities, various research institutions and from industry. The IBC is involved in national and international research collaborations. In cooperation with the HZDR Innovation GmbH, service activities in the field of ion beam processing of materials or electronic devices is offered at dedicated endstations.

RI Keywords
Ion-beam service, Ion-beam analysis, Competence and user facility, Ion beam facilities, Surface modifications with ions, Materials research with ions, Ion-solid-interactions
RI Category
Materials Synthesis or Testing Facilities
Analytical Facilities
Scientific Domain
Physics, Astronomy, Astrophysics and Mathematics
ESFRI Domain
Physical Sciences and Engineering
Access to Ion Beam installations

The Ion Beam Center (IBC) comprises electroctatic accelerators, ion implanters and plasma-based facilities at dedicated endstations for materials modification or analysis. These installations are open to access by external users. Available ion energies range from a few 10 eV to about 60 MeV. The use of the facilities includes the scientific and technical support during experiments. In addition to ion beam facilities, various semiconductor processing technologies under clean room conditions and complementary analytical tools as electron microscopy/spectroscopy and X-ray analysis may be used. Access to these installations at IBC can be provided on the basis of a scientific collaborations with research groups from HZDR, through experimental applications of external user or taking advantage of the commercial service activities by the HZDR Innovation GmbH (with costs). Applications can be submitted online. Access to facilities is provided based on scientific evaluation of the proposals by an external selection committee. Different rules apply with respect to the service activities.

3 ion implanters (< 1 keV - 1 MeV)
Plasma-based ion implantation
Ion- / plasma assisted deposition
Endstations for ion implantation / irradiation
Double-beam experiments
In-situ IBA during deposition / annealing
3 electrostatic accelerators (0.25 - 60 MeV)
Ion-beam analysis IBA (RBS, ERDA etc.)
Focused ion beam facilities
Highly-charged ion facilities
Structure analysis: TEM / SEM / X-ray
Semiconductor processing (clean room)
Additional Data