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Centre for Technology of the Institute of Optoelectronic Systems and Microtechnology of the UPM (CT-ISOM)
Hosting Legal Entity
Technical University of Madrid
Avenida Complutense 30, Escuela Tecnica Superior de Ingenieros de Telecomunicación, Madrid, PO: 28040, Comunidad de Madrid (Spain)
Type Of RI
Coordinating Country
Participating Countries
Current Status:
Operational since 2000
Scientific Description
ISOM is a multi-departmental research institution devoted to graduate research and education in electrical engineering, which is affiliated to the Universidad Politecnica de Madrid (UPM). The ISOM facilities include a 400 m2 cleanroom (100-1000 class), and 300 m2 of characterization and system development laboratories. The technology processes available at ISOM allow the fabrication and characterization of materials, their technological processing, and the fabrication of integrated electronic, optoelectronic, optic and magnetic devices. At present, ISOM has the capability to fabricate and develop laser and light emitting diodes for instrumentation, environment and optical communications; microwave transistors for high power and temperature applications; infrared photodetectors for civil and military applications; ultraviolet photodetectors for UV solar radiation monitoring and military applications; magnetic sensors for a wide range of applications, and SAW filters for RF and mobile communications.

RI Keywords
Detectors, Photonics, Emitters, Magnetics, Optoelectronics, Nanotechnology, Semi-conductors, Devices, Sensors
RI Category
Energy Engineering Facilities (non nuclear)
Micro- and Nanotechnology facilities
Electrical and Optical Engineering Facilities
Scientific Domain
Chemistry and Material Sciences
Engineering and Energy
Information Science and Technology
ESFRI Domain
Physical Sciences and Engineering
e-Beam Evaporation Deposition

Evaporation by electron beam of different metals: Au, Pt, Ti, Al, etc.

Sputtering for Magnetic Materials

Deposition of magnetic thin films ((Fe, Ni, Co, FeNi, etc.).

Optical Characterization

Photoluminescence analysis.

Molecular Beams Epitaxy (MBE) for semiconductors (AlGaInAs and AlGaInN families)

Growth of Arsenides and Nitrides semiconductor compounds.

Electrodeposition of Au, Ni, CoP
Chemical Vapour Deposition (CVD) for isolators (Si-O-N systems)

Deposition of SiN and SiO layers.

Joule Evaporation Deposition

Evaporation by Joule effect of different metals: Au, AuGe, AuZn, Ni, etc.

Reactive Ion Etching (RIE) and Wet Etching

Etching of different materials.

Photo and E-Beam (nano) Lithography

Optical lithography and e-beam lithography.

Electrical and Magnetical Characterization

Hall-effect, VSM.

Microscopy and Structural Characterization

SEM, AFM and high resolution XRD.

Optoelectronic Characterization

Characterization of optoelectronic devices (detector, emitters, etc.).

Atomic Force Microscope (AFM)

System dedicated to obtain information on the surface morphology.

Probe Stations (Low Capacitance) for VLSI and discrete devices

Systems dedicated to electrical characterization of different types of optoelectronic devices.

Electrical and Optical Characterization System

System dedicated to characterize (electrically and optically) semiconductor materials and optoelectronic devices from room temperature up to 400°C and high frequency (up to 1 GHz) (C-V. I-V, C-f, 1/f noise, T, etc.).

Hall Effect system

System dedicated to obtain electrical properties of thin films.

Microprobe Station and Systems for RF Network Analysis

Electrical characterization of devices with frequency up to 20 GHz.

Thickness Profiler (DecTac)

System dedicated to measure thicknesses.

High Resolution X-Ray Diffractrometers (HR-XRD)

Systems dedicated to determining crystal structures by performing different types of profiles.

High Resolution Nanolithography System

Electron beam nanolithography system with line resolution of 10 nm.

Magnetron Sputtering System

Systems dedicated to the growth of magnetic heterostructures.

High precision blade, diamond Scriber and perfilometer

System for dicing different type of wafers.

Scanning Electron Microscope (SEM) with EDAX

System dedicated to obtaining morphology data and chemical analysis.

Reactive Ion Etching (RIE) System

Plasma-assisted reactive ion etching system.

Molecular Beam Epitaxy (MBE) Facilities

4 MBEs systems dedicated to the growth of Arsenides and Nitrides semiconductor compounds.

Vibrating Sample Magnetometer (VSM)

System dedicated to characterize magnetic thin films.

Ultrasonic and Thermocompression Microsoldering Systems

Systems for soldering micro wires.

Metal Deposition Evaporators (Joule, e-beam)

Joule and e-beam evaporators for metal (Ti, Al, Mo, Ni, Au, etc) deposition.

UV, VIS and IR Luminescence (PL) System

Photoluminescence systems with cryostat allowing measuring optical properties from 10K to room temperature.

Chemical Vapour Deposition (CVD and PECVD)

Systems for depositing dielectric materials (SiN, SiO, etc).

High Resolution Nomarski Optical Microscope

System dedicated to analyze surface morphology.

Standard and Rapid Thermal Annealing (RTA)

Systems used for annealing of contacts and re-ordering of different materials.

UV Photolithography System

Standard optical enhanced lithography system with resolution >1 μm.

Access Type
Access Mode
Excellence Driven, Wide
Users Definition
Teams of individual researchers
Type of Users
Academic - 90.0%
Public research organisations - 10.0%
RED LAB de la Comunidad de Madrid
Date of last update: 30/01/2018
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