You are here: Home / Infrastructures / Res. Infrastructure
Centre for Technology of the Institute of Optoelectronic Systems and Microtechnology of the UPM (CT-ISOM)
Identification
Hosting Legal Entity
Technical University of Madrid
Location
Avenida Complutense 30, Escuela Tecnica Superior de Ingenieros de Telecomunicación, Madrid, PO: 28040, Comunidad de Madrid (Spain)
Structure
Type Of RI
Single-sited
Coordinating Country
Spain
Participating Countries
Spain
Status
Status
Current Status:
Operational since 2000
Scientific Description
ISOM is a multi-departmental research institution devoted to graduate research and education in electrical engineering, which is affiliated to the Universidad Politecnica de Madrid (UPM). The ISOM facilities include a 400 m2 cleanroom (100-1000 class), and 300 m2 of characterization and system development laboratories. The technology processes available at ISOM allow the fabrication and characterization of materials, their technological processing, and the fabrication of integrated electronic, optoelectronic, optic and magnetic devices. At present, ISOM has the capability to fabricate and develop laser and light emitting diodes for instrumentation, environment and optical communications; microwave transistors for high power and temperature applications; infrared photodetectors for civil and military applications; ultraviolet photodetectors for UV solar radiation monitoring and military applications; magnetic sensors for a wide range of applications, and SAW filters for RF and mobile communications.

RI Keywords
Sensors, Devices, Detectors, Nanotechnology, Magnetics, Photonics, Emitters, Optoelectronics, Semi-conductors
Classifications
RI Category
Energy Engineering Facilities (non nuclear)
Electrical and Optical Engineering Facilities
Micro- and Nanotechnology facilities
Scientific Domain
Engineering and Energy
Chemistry and Material Sciences
Information Science and Technology
ESFRI Domain
Physical Sciences and Engineering
Services
e-Beam Evaporation Deposition

Evaporation by electron beam of different metals: Au, Pt, Ti, Al, etc.

Optoelectronic Characterization

Characterization of optoelectronic devices (detector, emitters, etc.).

Microscopy and Structural Characterization

SEM, AFM and high resolution XRD.

Reactive Ion Etching (RIE) and Wet Etching

Etching of different materials.

Sputtering for Magnetic Materials

Deposition of magnetic thin films ((Fe, Ni, Co, FeNi, etc.).

Molecular Beams Epitaxy (MBE) for semiconductors (AlGaInAs and AlGaInN families)

Growth of Arsenides and Nitrides semiconductor compounds.

Electrical and Magnetical Characterization

Hall-effect, VSM.

Joule Evaporation Deposition

Evaporation by Joule effect of different metals: Au, AuGe, AuZn, Ni, etc.

Chemical Vapour Deposition (CVD) for isolators (Si-O-N systems)

Deposition of SiN and SiO layers.

Electrodeposition of Au, Ni, CoP
Optical Characterization

Photoluminescence analysis.

Photo and E-Beam (nano) Lithography

Optical lithography and e-beam lithography.

Equipment
Thickness Profiler (DecTac)

System dedicated to measure thicknesses.

Magnetron Sputtering System

Systems dedicated to the growth of magnetic heterostructures.

Metal Deposition Evaporators (Joule, e-beam)

Joule and e-beam evaporators for metal (Ti, Al, Mo, Ni, Au, etc) deposition.

Reactive Ion Etching (RIE) System

Plasma-assisted reactive ion etching system.

High Resolution Nomarski Optical Microscope

System dedicated to analyze surface morphology.

Molecular Beam Epitaxy (MBE) Facilities

4 MBEs systems dedicated to the growth of Arsenides and Nitrides semiconductor compounds.

High Resolution Nanolithography System

Electron beam nanolithography system with line resolution of 10 nm.

Hall Effect system

System dedicated to obtain electrical properties of thin films.

Vibrating Sample Magnetometer (VSM)

System dedicated to characterize magnetic thin films.

Chemical Vapour Deposition (CVD and PECVD)

Systems for depositing dielectric materials (SiN, SiO, etc).

Ultrasonic and Thermocompression Microsoldering Systems

Systems for soldering micro wires.

UV Photolithography System

Standard optical enhanced lithography system with resolution >1 μm.

Probe Stations (Low Capacitance) for VLSI and discrete devices

Systems dedicated to electrical characterization of different types of optoelectronic devices.

Scanning Electron Microscope (SEM) with EDAX

System dedicated to obtaining morphology data and chemical analysis.

UV, VIS and IR Luminescence (PL) System

Photoluminescence systems with cryostat allowing measuring optical properties from 10K to room temperature.

Microprobe Station and Systems for RF Network Analysis

Electrical characterization of devices with frequency up to 20 GHz.

Atomic Force Microscope (AFM)

System dedicated to obtain information on the surface morphology.

Electrical and Optical Characterization System

System dedicated to characterize (electrically and optically) semiconductor materials and optoelectronic devices from room temperature up to 400°C and high frequency (up to 1 GHz) (C-V. I-V, C-f, 1/f noise, T, etc.).

Standard and Rapid Thermal Annealing (RTA)

Systems used for annealing of contacts and re-ordering of different materials.

High precision blade, diamond Scriber and perfilometer

System for dicing different type of wafers.

High Resolution X-Ray Diffractrometers (HR-XRD)

Systems dedicated to determining crystal structures by performing different types of profiles.

Access
Access Type
Physical
Access Mode
Excellence Driven, Wide
Users
Users Definition
Teams of individual researchers
Type of Users
Academic - 90.0%
Public research organisations - 10.0%
Collaborations
Networks
RED LAB de la Comunidad de Madrid
Date of last update: 30/01/2018
Printable version